VS-8EWS16SPBF series www.vishay.com vishay semiconductors revision: 16-jan-17 1 document number: 94350 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage surface mount input rectifier diode, 8 a features ? glass passivated pellet chip junction ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? input rectification ? vishay semiconductors switch es and output rectifiers which are available in identical package outlines description the VS-8EWS16SPBF rectifier hi gh voltage series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. the high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 product summary package to-252aa (d-pak) i f(av) 8 a v r 1600 v v f at i f 1.1 v i fsm 150 a t j max. 150 c diode variation single die ba s e cathode + 2 13 a node -- anode 1 2 3 to-252aa (d-pak) output current in typical applications applications single-phase bridge three-phase bridge units nema fr-4 or g10 glass fabric-based epoxy with 4 oz. (140 m) copper 1.2 1.6 a aluminum ims, r thca = 15 c/w 2.5 2.8 aluminum ims with heatsink, r thca = 5 c/w 5.5 6.5 major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 8 a v rrm 1600 v i fsm 150 a v f 8 a, t j = 25 c 1.10 v t j -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma VS-8EWS16SPBF 1600 1700 0.5
VS-8EWS16SPBF series www.vishay.com vishay semiconductors revision: 16-jan-17 2 document number: 94350 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w ? for recommended footprint and soldering tech niques refer to appl ication note #an-994 ? ? absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 8 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 125 10 ms sine pulse, no voltage reapplied 150 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 78 a 2 s 10 ms sine pulse, no voltage reapplied 110 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 1100 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 8 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 20 m ? threshold voltage v f(to) 0.82 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.05 ma t j = 150 c 0.50 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 2.5 c/w typical thermal resistance, ? junction to ambient (pcb mount) (1) r thja 62 approximate weight 1g 0.03 oz. marking device case style to-252aa (d-pak) 8ews16s
VS-8EWS16SPBF series www.vishay.com vishay semiconductors revision: 16-jan-17 3 document number: 94350 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 130 140 150 120 110 100 90 80 maximum allowable case temperature (c) average forward current (a) 246810 12 0 30 60 90 120 180 8ews. series r thjc (dc) = 2.5 c/w conduction angle ? 90 130 140 150 120 110 100 maximum allowable case temperature (c) average forward current (a) 8 6 4 21012 14 18 16 0 dc 30 60 90 120 180 8ews. series r thjc (dc) = 2.5 c/w ? conduction period 10 12 14 16 8 6 4 2 0 maximum average forward power loss (w) average forward current (a) 8 10 246 0 rms limit 180 120 90 60 30 8ews. series t j = 150 c conduction angle ? 8 6 4 2 0 10 12 14 16 18 20 maximum average forward power loss (w) average forward current (a) 246 14 16 81012 0 dc 180 120 90 60 30 rms limit 8ews. series t j = 150 c ? conduction period peak half sine wave forward current (a) number of equal amplitude half cycle current pulse (n) 1 10 100 30 40 50 60 70 80 90 100 110 120 130 140 v s -8ew s 16 s .. s erie s at any rated load condition and with rated vrrm applied following s urge. initial tj = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 0.01 0.1 1 10 0 20 40 60 80 100 120 140 160 maximum non-repetitive s urge current ver s u s pul s e train duration. initial tj = tj max. no voltage reapplied rated v rrm reapplied v s -8ew s 16 s .. s erie s
VS-8EWS16SPBF series www.vishay.com vishay semiconductors revision: 16-jan-17 4 document number: 94350 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 10 100 instantaneous forward current (a) instantaneous forward voltage (v) 1.0 0.5 1.5 2.0 2.5 3.0 0 t j = 25 c t j = 150 c 8ews. series 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 8ews. series single pulse
VS-8EWS16SPBF series www.vishay.com vishay semiconductors revision: 16-jan-17 5 document number: 94350 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95059 packaging information www.vishay.com/doc?95033 device code 5 1 3 2 4 6 7 8 9 8 vs- e w s 16 s tr pbf 2 - current rating (8 = 8 a) 1 - vishay semiconductors product 6 - voltage rating (16 = 1600 v) 3 - circuit configuration: e = single diode 4 - package: w = d-pak 5 - type of silicon: s = standard recovery rectifier 7 - s = surface mountable 8 - tr = tape and reel trr = tape and reel (right oriented) trl = tape and reel (left oriented) - pbf = lead (pb)-free 9
outline dimensions www.vishay.com vishay semiconductors revision: 05-dec-12 1 document number: 95016 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d-pak (to-252aa) dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension unc ontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a minimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold fl ash. mold flash shall not ex ceed 0.127 mm (0.005") per side . these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 app lied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? gauge plane lead tip m 0.010 cab m 32 4 1 e1 d1 min. 0.265 (6.74) min. 0.245 (6.23) min. 0.089 (2.28) min. 0.06 (1.524) 0.488 (12.40) 0.409 (10.40) 0.093 (2.38) 0.085 (2.18) pad layout
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